US Patent Class 332
MODULATORS




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Current as of: June, 1999
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  DF  CLASS NOTES
100  DF  FREQUENCY SHIFT KEYING MODULATOR OR MINIMUM SHIFT KEYING MODULATOR
101  DF  .~ Including logic element (e.g., logic gate or flip-flop)
102  DF  .~ Including discrete semiconductor device
103  DF  PHASE SHIFT KEYING MODULATOR OR QUADRATURE AMPLITUDE MODULATOR
104  DF  .~ Including logic element (e.g., logic gate or flip-flop)
105  DF  .~ Including discrete semiconductor device
106  DF  PULSE OR INTERRUPTED CONTINUOUS WAVE MODULATOR
107  DF  .~ Including stabilization or alternatively distortion, noise or other interference prevention, reduction or compensation
108  DF  .~ Plural modulation
109  DF  .~ Pulse width modulator
110  DF  .~.~ Including discrete semiconductor device having three or more electrodes
111  DF  .~.~ Including electron discharge device
112  DF  .~ Pulse position, frequency, phase, or spacing modulator
113  DF  .~.~ Including discrete semiconductor device having three or more electrodes
114  DF  .~.~ Including electron discharge device
115  DF  .~ Pulse amplitude modulator
116  DF  .~.~ Including discrete semiconductor device having three or more electrodes
117  DF  FREQUENCY MODULATOR
118  DF  .~ Including measuring or indicating
119  DF  .~ Plural modulation
120  DF  .~.~ Including amplitude modulation
121  DF  .~.~.~ Including electron discharge device
122  DF  .~.~ Including electron discharge device
123  DF  .~ Including stabilization or alternatively distortion, noise or other interference prevention, reduction, or compensation
124  DF  .~.~ Nonlinearity reduction or compensation
125  DF  .~.~ Automatic amplitude stabilization or control
126  DF  .~.~ Automatic frequency stabilization or control
127  DF  .~.~.~ Phase or frequency locked loop
128  DF  .~.~.~.~ Modulating signal applied to plural elements of the loop
129  DF  .~ Including microwave or distributed parameter structure
130  DF  .~.~ With discrete semiconductor device
131  DF  .~.~ With electron discharge device
132  DF  .~.~.~ Magnetron type
133  DF  .~.~.~ Klystron type
134  DF  .~.~.~ Travelling wave type
135  DF  .~ Including discrete semiconductor device
136  DF  .~.~ With varactor
137  DF  .~ Including electron discharge device
138  DF  .~.~ Particular oscillator circuit
139  DF  .~.~.~ Crystal oscillator type
140  DF  .~.~.~.~ With separate modulator tube (e.g., reactance tube)
141  DF  .~.~.~ L-C oscillator type
142  DF  .~.~.~.~ With separate modulator tube (e.g., reactance tube)
143  DF  .~.~.~.~.~ Plural modulator tubes
144  DF  PHASE MODULATOR
145  DF  .~ Including amplitude modulator
146  DF  .~ Including discrete semiconductor device
147  DF  .~ Including electron discharge device
148  DF  .~.~ Push-pull circuit
149  DF  AMPLITUDE MODULATOR
150  DF  .~ Including measuring or indicating
151  DF  .~ Plural modulation
152  DF  .~.~ Including discrete semiconductor device
153  DF  .~.~ Including electron discharge device
154  DF  .~.~.~ Push-pull circuit
155  DF  .~ Percent modulation control or automatic amplitude control of carrier or modulating signal
156  DF  .~.~ Overmodulation prevention
157  DF  .~.~ Average carrier amplitude controlled by modulating signal
158  DF  .~.~ Carrier output suppressed during absence of modulating signal
159  DF  .~ Including stabilization or alternatively distortion, noise or other interference prevention, reduction or compensation
160  DF  .~.~ Reduction or compensation of nonlinearity in modulation characteristic
161  DF  .~.~ Reduction of carrier phase or frequency variations or modulation
162  DF  .~.~ Using feedback to reduce distortion, noise or other interference
163  DF  .~ Including microwave or distributed parameter structure
164  DF  .~.~ With discrete semiconductor device
165  DF  .~.~ With electron discharge device
166  DF  .~.~.~ Magnetron type
167  DF  .~ Suppressed carrier double sideband type
168  DF  .~.~ Including discrete semiconductor device
169  DF  .~.~ Including electron discharge device
170  DF  .~ Single or vestigial sideband type
171  DF  .~.~ Including electron discharge device
172  DF  .~ Modulating signal applied to a bridge circuit
173  DF  .~ Magnetic field varied by modulating signal
174  DF  .~ Resistive or dissipative device controlled by modulating signal (e.g., loss modulator)
175  DF  .~ Variable reactance controlled by modulating signal
176  DF  .~ Nonlinear device controlled by modulating signal
177  DF  .~.~ Nonlinear discrete semiconductor device
178  DF  .~ Including discrete semiconductor device
179  DF  .~ Including electron discharge device
180  DF  .~.~ Push-pull circuit
181  DF  .~.~ Plate circuit modulation
182  DF  .~.~ Grid circuit modulation
183  DF  MODULATION CONVERTER HAVING PRE-MODULATED INPUT (E.G., FM TO AM)
184  DF  .~ Between diverse pulse modulation types
185  DF  MISCELLANEOUS