US PATENT SUBCLASS 117 / 11
PROCESSES OF GROWTH FROM LIQUID OR SUPERCRITICAL STATE

Current as of: June, 1999
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117 /   HD   SINGLE-CRYSTAL, ORIENTED-CRYSTAL, AND EPITAXY GROWTH PROCESSES; NON-COATING APPARATUS THEREFOR

11PROCESSES OF GROWTH FROM LIQUID OR SUPERCRITICAL STATE {7}
12  DF  .~> Crucibleless process having movement of discrete droplets or solid particles to thin-film precursor (e.g., Verneuil method)
13  DF  .~> Having pulling during growth (e.g., Czochralski method, zone drawing) {9}
37  DF  .~> Having moving solid-liquid-solid region {8}
53  DF  .~> Forming a single-crystal region by liquefying a region of a single-crystal and adjusting the composition of the liquid (e.g., alloying, regrowth)
54  DF  .~> Liquid phase epitaxial growth (LPE) {9}
68  DF  .~> Having growth from a solution comprising a solvent which is liquid at or below 20 degrees Celsius (e.g., aqueous solution) {3}
73  DF  .~> Havin growth from molten state (e.g., solution melt) {6}

DEFINITION

Classification: 117/11

PROCESSES OF GROWTH FROM LIQUID OR SUPERCRITICAL STATE:

(under the class definition) Subject matter in which an immediate-precursor* supplies crystallization material in the liquid or supercritical state to the growing single-crystal*.

(1) Note. The immediate-precursor* may comprise dissolved, molten, or otherwise liquid media.

(2) Note. All uses of the term liquid in this and indented

subclasses shall be taken to mean liquid or supercritical state.

(3) Note. See the (5) Note located in subclass 13 for discussion of distinguishing characteristics among several liquid phase processes.

SEE OR SEARCH THIS CLASS, SUBCLASS:

206+, for corresponding apparatus other than coating apparatus.