US PATENT SUBCLASS 216 / 76
.~.~.~ Etching of substrate containing at least one compound having at least one oxygen atom and at least one metal atom

Current as of: June, 1999
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216 /   HD   ETCHING A SUBSTRATE: PROCESSES

58  DF  GAS PHASE ETCHING OF SUBSTRATE {6}
74  DF  .~ Etching inorganic substrate {3}
75  DF  .~.~ Substrate contains elemental metal, alloy thereof, or metal compound {3}
76.~.~.~ Etching of substrate containing at least one compound having at least one oxygen atom and at least one metal atom

DEFINITION

Classification: 216/76

Etching of substrate containing at least one compound having at least one oxygen atom and at least one metal atom:

(under subclass 75) Process wherein the material etched contains a compound having at least one metal atom and at least one oxygen atom, e.g., indium titanium oxide (I.T.O.), a ceramic oxide, etc.

(1) Note. The metal oxygen compound may also contain other elements.