US PATENT SUBCLASS 216 / 99
.~.~ Substrate contains silicon or silicon compound

Current as of: June, 1999
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216 /   HD   ETCHING A SUBSTRATE: PROCESSES

83  DF  NONGASEOUS PHASE ETCHING OF SUBSTRATE {9}
96  DF  .~ Etching inorganic substrate {3}
99.~.~ Substrate contains silicon or silicon compound

DEFINITION

Classification: 216/99

Substrate contains silicon or silicon compound:

(under subclass 96) Process wherein the substrate contains silicon in either elemental form or combined form.

SEE OR SEARCH CLASS

438, Semiconductor Device Manufacturing: Process, for (a) combined processes and (b) unit operation not elsewhere provided for manufacturing a semiconductive electrical substrate or device.