US PATENT SUBCLASS 250 / 370.01
.~ Semiconductor system

Current as of: June, 1999
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250 /   HD   RADIANT ENERGY

336.1  DF  INVISIBLE RADIANT ENERGY RESPONSIVE ELECTRIC SIGNALLING {16}
370.01.~ Semiconductor system {13}
370.02  DF  .~.~> Alpha particle detection system
370.03  DF  .~.~> Fission fragment/fissionable isotope detection system
370.04  DF  .~.~> Self-powered system
370.05  DF  .~.~> Neutron detection system
370.06  DF  .~.~> Discrimination-type system
370.07  DF  .~.~> Dose or dose rate measurement
370.08  DF  .~.~> Imaging system {1}
370.1  DF  .~.~> Position sensitive detection system
370.11  DF  .~.~> Scintillation system
370.12  DF  .~.~> Of material other than germanium, diamond, or silicon {1}
370.14  DF  .~.~> Particular detection structure (e.g., MOS, PIN)
370.15  DF  .~.~> Temperature control or compensation system
371  DF  .~.~> Methods

DEFINITION

Classification: 250/370.01

Semiconductor system:

(under subclass 336.1) Subject matter wherein the invisible radiant energy responsive electric signal generating means, i.e., detection means, is made of a material having a resistivity intermediate that of metals and insulators, and means are provides for using or controlling the electric signal or for modifying the invisible radiant energy input signal.

(1) Note. This subclass and those indented thereunder do not provide for claims which only recite the structure of a photocell, per se. Photocells, per se, are classified elsewhere.

SEE OR SEARCH CLASS

257, Active Solid-State Devices (e.g., Transistors, Solid-State Diodes),

10, 11, 21, 53-56, 113-118, 184-189, 225-234, 257, 258, 290-294, and 414-466 for invisible radiation-sensitive active semiconductors devices.