US PATENT SUBCLASS 257 / 183.1
.~ Charge transfer device


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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

183  DF  HETEROJUNCTION DEVICE {10}
183.1.~ Charge transfer device


DEFINITION

Classification: 257/183.1

Charge transfer device:

(under subclass 183) Subject matter in which storage sites for packets of electric charge are induced at or below the surface of the active solid-state (semiconductor) device by an electric field applied to the device and wherein carrier potential energy per unit charge minima is established at a given storage site and such minima is transferred to one or more adjacent storage sites in a serial manner and which contains a junction between two semiconductor materials of different chemical compositions each different composition having a different carrier affinity.

(1) Note. Typically, heterojunctions are between materials which additionally have different band gaps, but that is not true of all heterojunctions.

SEE OR SEARCH THIS CLASS, SUBCLASS:

215, for charge transfer devices which do not involve heterojunctions.