US PATENT SUBCLASS 257 / 188
.~.~ Having narrow energy band gap (<<1eV) layer (e.g., PbSnTe, HgCdTe, etc.)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

183  DF  HETEROJUNCTION DEVICE {10}
184  DF  .~ Light responsive structure {4}
188.~.~ Having narrow energy band gap (<<1eV) layer (e.g., PbSnTe, HgCdTe, etc.) {1}
189  DF  .~.~.~> Layer is a group III-V semiconductor compound

DEFINITION

Classification: 257/188

Having narrow energy band gap (<<1eV) layer (e.g., PbSnTe, HgCdTe, etc.):

(under subclass 184) Subject matter wherein the light responsive device contains a narrow energy band gap (<<1eV) layer (e.g., PbSnTe or HgCdTe).