US PATENT SUBCLASS 257 / 256
.~ Junction field effect transistor (unipolar transistor)


Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
256.~ Junction field effect transistor (unipolar transistor) {15}
257  DF  .~.~> Light responsive or combined with light responsive device {1}
259  DF  .~.~> Elongated active region acts as transmission line or distributed active element (e.g., "transmission line" field effect transistor)
260  DF  .~.~> Same channel controlled by both junction and insulated gate electrodes, or by both Schottky barrier and pn junction gates (e.g., "taper isolated" memory cell)
261  DF  .~.~> Junction gate region free of direct electrical connection (e.g., floating junction gate memory cell structure)
262  DF  .~.~> Combined with insulated gate field effect transistor (IGFET)
263  DF  .~.~> Vertical controlled current path {3}
268  DF  .~.~> Enhancement mode {1}
270  DF  .~.~> Plural, separately connected, gates control same channel region
271  DF  .~.~> Load element or constant current source (e.g., with source to gate connection)
272  DF  .~.~> Junction field effect transistor in integrated circuit {4}
279  DF  .~.~> Pn junction gate in compound semiconductor material (e.g., GaAs)
280  DF  .~.~> With Schottky gate {3}
285  DF  .~.~> With profiled channel dopant concentration or profiled gate region dopant concentration (e.g., maximum dopant concentration below surface)
286  DF  .~.~> With non-uniform channel thickness or width
287  DF  .~.~> With multiple channels or chanel segments connected in parallel, or with channel much wider than length between source and drain (e.g., power JFET)


DEFINITION

Classification: 257/256

Junction field effect transistor (unipolar transistor):

(under subclass 213) Subject matter wherein the field effect device is a junction field effect transistor, i.e., in which current flow through a thin channel of semiconductor material is controlled by an electric field applied to a control region or electrode in rectifying contact (i.e., a pn junction or Schottky barrier junction) with the semiconductor material of the channel, so that the depletion region extending into the channel from the rectifying contact reduces the thickness of the undepleted portion of the channel to reduce the current flow through the channel.