US PATENT SUBCLASS 257 / 27
.~.~.~ Field effect transistor

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

9  DF  THIN ACTIVE PHYSICAL LAYER WHICH IS (1) AN ACTIVE POTENTIAL WELL LAYER THIN ENOUGH TO ESTABLISH DISCRETE QUANTUM ENERGY LEVELS OR (2) AN ACTIVE BARRIER LAYER THIN ENOUGH TO PERMIT QUANTUM MECHANICAL TUNNELING OR (3) AN ACTIVE LAYER THIN ENOUGH TO PERMIT CARRIER TRANSMISSION WITH SUBSTANTIALLY NO SCATTERING (E.G., SUPERLATTICE, QUANTUM WELL, OR BALLISTIC TRANSPORT DEVICE) {5}
12  DF  .~ Heterojunction {3}
26  DF  .~.~ Ballistic transport device {1}
27.~.~.~ Field effect transistor

DEFINITION

Classification: 257/27

Field effect transistor:

(under subclass 26) Subject matter wherein the ballistic transport device is a field effect transistor, i.e., one which has two or more terminals denoted as source and gate with a conduction channel therebetween, and in which the current through the conducting channel is controlled by an electric field coming from a voltage which is applied between the gate and source terminals thereof.

(1) Note. See illustration, below, of various field effect devices under subclass 213.