US PATENT SUBCLASS 257 / 32
.~.~.~ Particular electrode material


Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

9  DF  THIN ACTIVE PHYSICAL LAYER WHICH IS (1) AN ACTIVE POTENTIAL WELL LAYER THIN ENOUGH TO ESTABLISH DISCRETE QUANTUM ENERGY LEVELS OR (2) AN ACTIVE BARRIER LAYER THIN ENOUGH TO PERMIT QUANTUM MECHANICAL TUNNELING OR (3) AN ACTIVE LAYER THIN ENOUGH TO PERMIT CARRIER TRANSMISSION WITH SUBSTANTIALLY NO SCATTERING (E.G., SUPERLATTICE, QUANTUM WELL, OR BALLISTIC TRANSPORT DEVICE) {5}
30  DF  .~ Tunneling through region of reduced conductivity {3}
31  DF  .~.~ Josephson {4}
32.~.~.~ Particular electrode material {1}
33  DF  .~.~.~.~> High temperature (i.e., >30 Kelvin)


DEFINITION

Classification: 257/32

Particular electrode material:

(under subclass 31) Subject matter wherein the electrode material is specified.