US PATENT SUBCLASS 257 / 322
.~.~.~.~.~ With charging or discharging by control voltage applied to source or drain region (e.g., by avalanche breakdown of drain junction)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
314  DF  .~.~ Variable threshold (e.g., floating gate memory device) {2}
315  DF  .~.~.~ With floating gate electrode {2}
316  DF  .~.~.~.~ With additional contacted control electrode {5}
322.~.~.~.~.~ With charging or discharging by control voltage applied to source or drain region (e.g., by avalanche breakdown of drain junction)

DEFINITION

Classification: 257/322

With charging or discharging by control voltage applied to source or drain region (e.g., by avalanche breakdown of drain junction):

(under subclass 316) Subject matter wherein the variable threshold device is structured to charge or discharge a floating gate electrode by a control voltage applied to source or drain region (e.g., by avalanche breakdown of drain junction).