US PATENT SUBCLASS 257 / 323
.~.~.~.~ With means to facilitate light erasure

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
314  DF  .~.~ Variable threshold (e.g., floating gate memory device) {2}
315  DF  .~.~.~ With floating gate electrode {2}
323.~.~.~.~ With means to facilitate light erasure

DEFINITION

Classification: 257/323

With means to facilitate light erasure:

(under subclass 315) Subject matter including means to make erasure of the electrical charge content of the device by light easier (e.g., by providing an ultraviolet light window layer over the floating gate electrode to reduce absorption of erasing light).