US PATENT SUBCLASS 257 / 348
.~.~.~ Depletion mode field effect transistor

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
347  DF  .~.~ Single crystal semiconductor layer on insulating substrate (SOI) {4}
348.~.~.~ Depletion mode field effect transistor

DEFINITION

Classification: 257/348

Depletion mode field effect transistor:

(under subclass 347) Subject matter wherein the SOI device is a field effect transistor which operates in the depletion mode, i.e., a FET which passes maximum operating current with the gate to source biased to zero volts.