US PATENT SUBCLASS 257 / 378
.~.~.~ Combined with bipolar transistor

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
368  DF  .~.~ Insulated gate field effect transistor in integrated circuit {10}
378.~.~.~ Combined with bipolar transistor

DEFINITION

Classification: 257/378

Combined with bipolar transistor:

(under subclass 368) Subject matter wherein the IGFET is combined with a bipolar transistor in a single semiconductor chip.

(1) Note. An active solid-state electronic device that contains both bipolar and field effect transistors may be referred to as a BI-FET device.