US PATENT SUBCLASS 257 / 397
.~.~.~.~.~.~ In vertical-walled groove

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
368  DF  .~.~ Insulated gate field effect transistor in integrated circuit {10}
394  DF  .~.~.~ With means to prevent parasitic conduction channels {2}
395  DF  .~.~.~.~ Thick insulator portion {2}
396  DF  .~.~.~.~.~ Recessed into semiconductor surface {2}
397.~.~.~.~.~.~ In vertical-walled groove

DEFINITION

Classification: 257/397

In vertical-walled groove:

(under subclass 396) Subject matter wherein the recessed thick isolator portion is in a groove in the surface of the overall device which extends perpendicular to the surface of the overall device.