US PATENT SUBCLASS 257 / 407
.~.~.~ With gate electrode of controlled workfunction material (e.g., low workfunction gate material)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
402  DF  .~.~ With permanent threshold adjustment (e.g., depletion mode) {3}
407.~.~.~ With gate electrode of controlled workfunction material (e.g., low workfunction gate material)

DEFINITION

Classification: 257/407

With gate electrode of controlled workfunction material (e.g., low workfunction gate material):

(under subclass 402) Subject matter wherein the device has a gate electrode selected to have a controlled amount of minimum energy needed to be applied thereto to liberate an electron from its Fermi-level and send it into free space.

SEE OR SEARCH THIS CLASS, SUBCLASS:

10, and 11, for low workfunction material layer used for electron emission.