US PATENT SUBCLASS 257 / 441
.~.~.~ Narrow band gap semiconductor (<<1 eV) (e.g., PbSnTe)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

414  DF  RESPONSIVE TO NON-ELECTRICAL SIGNAL (E.G., CHEMICAL, STRESS, LIGHT, OR MAGNETIC FIELD SENSORS) {4}
428  DF  .~ Electromagnetic or particle radiation {2}
431  DF  .~.~ Light {15}
441.~.~.~ Narrow band gap semiconductor (<<1 eV) (e.g., PbSnTe) {1}
442  DF  .~.~.~.~> II-VI compound semiconductor (e.g., HgCdTe)

DEFINITION

Classification: 257/441

Narrow band gap semiconductor (<<1eV) (e.g., PbSnTe):

(under subclass 431) Subject matter wherein the device contains a semiconductor material which has a gap between its conduction and valence bands which is less than one electron volt.