US PATENT SUBCLASS 257 / 50
.~ Non-single crystal, or recrystallized, active junction adapted to be electrically shorted (e.g., "anti-fuse" element)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

49  DF  NON-SINGLE CRYSTAL, OR RECRYSTALLIZED, SEMICONDUCTOR MATERIAL FORMS PART OF ACTIVE JUNCTION (INCLUDING FIELD-INDUCED ACTIVE JUNCTION) {9}
50.~ Non-single crystal, or recrystallized, active junction adapted to be electrically shorted (e.g., "anti-fuse" element)

DEFINITION

Classification: 257/50

Non-single crystal, or recrystallized, active junction adapted to be electrically shorted (e.g., "anti-fuse" element):

(under subclass 49) Subject matter wherein the active junction is structured or arranged to form an electrical short circuit between the electrical terminals of the active device.