US PATENT SUBCLASS 257 / 538
.~.~.~.~ Polycrystalline silicon (doped or undoped)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

499  DF  INTEGRATED CIRCUIT STRUCTURE WITH ELECTRICALLY ISOLATED COMPONENTS {9}
528  DF  .~ Passive components in ICs {4}
536  DF  .~.~ Including resistive element {2}
537  DF  .~.~.~ Using specific resistive material {1}
538.~.~.~.~ Polycrystalline silicon (doped or undoped)

DEFINITION

Classification: 257/538

Polycrystalline silicon (doped or undoped):

(under subclass 537) Subject matter wherein the specific resistive material is a silicon material made up of many single crystals having a random orientation.