| 257 / | HD | ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES) |
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| 499 | DF | INTEGRATED CIRCUIT STRUCTURE WITH ELECTRICALLY ISOLATED COMPONENTS {9} |
| 544 |  | .~ With pn junction isolation {8} |
| 545 | DF | .~.~> With means to control isolation junction capacitance (e.g., lightly doped layer at isolation junction to increase depletion layer width) |
| 546 | DF | .~.~> With structural means to protect against excess or reversed polarity voltage |
| 547 | DF | .~.~> With structural means to control parasitic transistor action or leakage current |
| 548 | DF | .~.~> At least three regions of alternating conductivity types with dopant concentration gradients decreasing from surface of semiconductor (e.g., "triple-diffused" integrated circuit) |
| 549 | DF | .~.~> With substrate and lightly doped surface layer of same conductivity type, separated by subsurface heavily doped region of opposite conductivity type (e.g., "collector diffused isolation" integrated circuit) |
| 550 | DF | .~.~> With lightly doped surface layer of one conductivity type on substrate of opposite conductivity type, having plural heavily doped portions of the one conductivity type between the layer and substrate, different ones of the heavily doped portions having differing depths or physical extent |
| 551 | DF | .~.~> Including voltage reference element (e.g., avalanche diode, so-called "Zener diode" with breakdown voltage greater than 6 volts or with positive temperature coefficient of breakdown voltage) |
| 552 | DF | .~.~> With bipolar transistor structure {3} |