US PATENT SUBCLASS 257 / 557
.~ Lateral bipolar transistor structure

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

499  DF  INTEGRATED CIRCUIT STRUCTURE WITH ELECTRICALLY ISOLATED COMPONENTS {9}
557.~ Lateral bipolar transistor structure {3}
558  DF  .~.~> With base region doping concentration step or gradient or with means to increase current gain
559  DF  .~.~> With active region formed along groove or exposed edge in semiconductor
560  DF  .~.~> With multiple collectors or emitters {2}

DEFINITION

Classification: 257/557

Lateral bipolar transistor structure:

(under subclass 499) Subject matter wherein the device includes at least one bipolar transistor which has a lateral structure (i.e., has current flow between its emitter and collector parallel to a major surface of the semiconductor chip).