US PATENT SUBCLASS 257 / 582
.~.~ With current ballasting means (e.g., emitter ballasting resistors or base current ballasting resistors)


Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

565  DF  BIPOLAR TRANSISTOR STRUCTURE {11}
578  DF  .~ With enlarged emitter area (e.g., power device) {4}
582.~.~ With current ballasting means (e.g., emitter ballasting resistors or base current ballasting resistors)


DEFINITION

Classification: 257/582

With current ballasting means (e.g., emitter ballasting resistors or base current ballasting resistors):

(under subclass 578) Subject matter wherein the enlarged emitter area has a current ballasting means (e.g., emitter ballasting resistors).