US PATENT SUBCLASS 257 / 605
.~ With means to limit area of breakdown (e.g., guard ring having higher breakdown voltage)


Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

603  DF  AVALANCHE DIODE (E.G., SO-CALLED "ZENER" DIODE HAVING BREAKDOWN VOLTAGE GREATER THAN 6 VOLTS) {2}
605.~ With means to limit area of breakdown (e.g., guard ring having higher breakdown voltage) {1}
606  DF  .~.~> Subsurface breakdown


DEFINITION

Classification: 257/605

With means to limit area of breakdown (e.g., guard ring having higher breakdown voltage):

(under subclass 603) Subject matter in which the avalanche diode device is provided with means to limit the area of the device in which electrical breakdown occurs (e.g., a guard ring having a higher breakdown voltage than the area it surrounds).