US PATENT SUBCLASS 257 / 641
.~.~.~.~ Combined with glass layer

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

629  DF  WITH MEANS TO CONTROL SURFACE EFFECTS {4}
632  DF  .~ Insulating coating {8}
635  DF  .~.~ Multiple layers {8}
640  DF  .~.~.~ At least one layer of silicon nitride {1}
641.~.~.~.~ Combined with glass layer

DEFINITION

Classification: 257/641

Combined with glass layer:

(under subclass 640) Subject matter wherein in addition to the layer of silicon nitride, there is at least one layer of glass in the multiple insulating layers on the semiconductor body.

(1) Note. For purposes of the definitions of this class, a material is considered to be a glass if it is amorphous (i.e., non-crystalline, and its major constituents are a mixture of oxides of more than one element). An oxide of a single element, such as silicon dioxide, is not regarded as a glass layer, while a mixture of phosphorus oxide and silicon dioxide (phosphosilicate glass) would be regarded as a glass.