US PATENT SUBCLASS 257 / 66
.~ Field effect device in non-single crystal, or recrystallized, semiconductor material

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

49  DF  NON-SINGLE CRYSTAL, OR RECRYSTALLIZED, SEMICONDUCTOR MATERIAL FORMS PART OF ACTIVE JUNCTION (INCLUDING FIELD-INDUCED ACTIVE JUNCTION) {9}
66.~ Field effect device in non-single crystal, or recrystallized, semiconductor material {3}
67  DF  .~.~> In combination with device formed in single crystal semiconductor material (e.g., stacked FETs) {3}
71  DF  .~.~> In combination with capacitor element (e.g., DRAM)
72  DF  .~.~> In array having structure for use as imager or display, or with transparent electrode

DEFINITION

Classification: 257/66

Field effect device in non-single crystal, or recrystallized, Semiconductor material:

(under subclass 49) Subject matter wherein the active solid-state device is a field effect device, i.e., one which operates with the application of a voltage across electrical terminals thereof.

SEE OR SEARCH CLASS

438, Semiconductor Device Manufacturing: Process, particularly

149+, for methods of forming a field effect transistor on an insulating substrate or layer (e.g., SOS, SOI, etc.).