| 257 / | HD | ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES) |
|
| 734 | DF | COMBINED WITH ELECTRICAL CONTACT OR LEAD {14} |
| 741 |  | .~ Of specified material other than unalloyed aluminum {10} |
| 742 | DF | .~.~> With a semiconductor conductivity substitution type dopant (e.g., germanium in the case of a gallium arsenide semiconductor) in a contact metal {1} |
| 744 | DF | .~.~> For compound semiconductor material {1} |
| 746 | DF | .~.~> Composite material (e.g., fibers or strands embedded in solid matrix) |
| 747 | DF | .~.~> With thermal expansion matching of contact or lead material to semiconductor active device {1} |
| 749 | DF | .~.~> At least portion of which is transparent to ultraviolet, visible or infrared light |
| 750 | DF | .~.~> Layered {10} |
| 767 | DF | .~.~> Resistive to electromigration or diffusion of the contact or lead material |
| 768 | DF | .~.~> Refractory or platinum group metal or alloy or silicide thereof {2} |
| 771 | DF | .~.~> Alloy containing aluminum |
| 772 | DF | .~.~> Solder composition |