US PATENT SUBCLASS 326 / 108
.~.~.~ CMOS


Current as of: June, 1999
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326 /   HD   ELECTRONIC DIGITAL LOGIC CIRCUITRY

104  DF  FUNCTION OF AND, OR, NAND, NOR, or NOT {7}
105  DF  .~ Decoding {1}
106  DF  .~.~ With field-effect transistor {2}
108.~.~.~ CMOS


DEFINITION

Classification: 326/108

CMOS:

(under subclass 106) Subject matter wherein the logic function unit includes at least two metal-oxide field-effect transistors (MOSFET), each having a channel of conductivity type opposite that of the other (e.g., p-channel vs. n-channel, etc.).

(1) Note. A MOSFET is a field-effect transistor having a metallic gate insulated from the channel by an oxide layer (e.g., SiO2, etc.).

(2) Note. Opposite channel conductivity type, as used above, characterizes the induced channel majority carrier conduction (i.e., holes for p-channel and electrons for n-channel).