US PATENT SUBCLASS 327 / 428
.~.~.~ With silicon controlled rectifier (SCR)

Current as of: June, 1999
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327 /   HD   MISCELLANEOUS ACTIVE ELECTRICAL NONLINEAR DEVICES, CIRCUITS, AND SYSTEMS

365  DF  GATING (I.E., SWITCHING INPUT TO OUTPUT) {12}
419  DF  .~ Utilizing three or more electrode solid-state device {7}
427  DF  .~.~ Field-effect transistor {5}
428.~.~.~ With silicon controlled rectifier (SCR)

DEFINITION

Classification: 327/428

With silicon controlled rectifier (SCR):

(under subclass 427) Subject matter wherein the switching circuit includes a field-effect transistor and a four layer (pnpn), three junction, three electrode (anode, cathode, and gate) device which can be triggered into conduction in only one direction.