US PATENT SUBCLASS 327 / 432
.~.~.~ With bipolar transistor


Current as of: June, 1999
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327 /   HD   MISCELLANEOUS ACTIVE ELECTRICAL NONLINEAR DEVICES, CIRCUITS, AND SYSTEMS

365  DF  GATING (I.E., SWITCHING INPUT TO OUTPUT) {12}
419  DF  .~ Utilizing three or more electrode solid-state device {7}
427  DF  .~.~ Field-effect transistor {5}
432.~.~.~ With bipolar transistor {1}
433  DF  .~.~.~.~> Bi-CMOS


DEFINITION

Classification: 327/432

With bipolar transistor:

(under subclass 427) Subject matter including a field-effect transistor and a semiconductor device of the type having at

least two potential barriers and having a controlled current flow of both majority and minority carriers (i.e., holes and electrons).