US PATENT SUBCLASS 327 / 480
.~.~.~.~ Multiple emitter transistor


Current as of: June, 1999
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327 /   HD   MISCELLANEOUS ACTIVE ELECTRICAL NONLINEAR DEVICES, CIRCUITS, AND SYSTEMS

365  DF  GATING (I.E., SWITCHING INPUT TO OUTPUT) {12}
419  DF  .~ Utilizing three or more electrode solid-state device {7}
478  DF  .~.~ Bipolar transistor {2}
479  DF  .~.~.~ Special four or more electrode device (e.g., multiple bases, three electrode bipolar with FET gate, etc.) {2}
480.~.~.~.~ Multiple emitter transistor


DEFINITION

Classification: 327/480

Multiple emitter transistor:

(under subclass 479) Subject matter wherein the bipolar transistor has at least two emitter regions in addition to the base and collector regions.