US PATENT SUBCLASS 257 / 147
.~ With extended latchup current level (e.g., gate turn off "GTO" device)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

107  DF  REGENERATIVE TYPE SWITCHING DEVICE (E.G., SCR, COMFET, THYRISTOR) {19}
147.~ With extended latchup current level (e.g., gate turn off "GTO" device) {5}
148  DF  .~.~> Having impurity doping for gain reduction
149  DF  .~.~> Having anode shunt means
150  DF  .~.~> With specified housing or external terminal {1}
152  DF  .~.~> Cathode emitter or cathode electrode feature
153  DF  .~.~> Gate region or electrode feature

DEFINITION

Classification: 257/147

With extended latchup current level (e.g., gate turn off "GTO" device):

(under subclass 107) Subject matter wherein the regenerative switching device includes means to provide regenerative action without latchup over an extended current range of the device, i.e., extends IH as defined in subclass 107.

(1) Note. Another name for this device is a gate controlled switch.