US PATENT SUBCLASS 257 / 153
.~.~ Gate region or electrode feature

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

107  DF  REGENERATIVE TYPE SWITCHING DEVICE (E.G., SCR, COMFET, THYRISTOR) {19}
147  DF  .~ With extended latchup current level (e.g., gate turn off "GTO" device) {5}
153.~.~ Gate region or electrode feature

DEFINITION

Classification: 257/153

Gate region or electrode feature:

(under subclass 147) Subject matter wherein the extended latchup current level device has a particular gate (control) electrode feature.