US PATENT SUBCLASS 257 / 304
.~.~.~.~ Storage node isolated by dielectric from semiconductor substrate

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
296  DF  .~.~ Insulated gate capacitor or insulated gate transistor combined with capacitor (e.g., dynamic memory cell) {10}
301  DF  .~.~.~ Capacitor in trench {4}
304.~.~.~.~ Storage node isolated by dielectric from semiconductor substrate

DEFINITION

Classification: 257/304

Storage node isolated by dielectric from semiconductor substrate:

(under subclass 301) Subject matter including an electrode upon which the charge varies as an indication of the memory state of the device (e.g., memory cell), and wherein the electrode is electrically isolated by a dielectric material from the semiconductor substrate of the device.