US PATENT SUBCLASS 257 / 301
.~.~.~ Capacitor in trench


Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
296  DF  .~.~ Insulated gate capacitor or insulated gate transistor combined with capacitor (e.g., dynamic memory cell) {10}
301.~.~.~ Capacitor in trench {4}
302  DF  .~.~.~.~> Vertical transistor
303  DF  .~.~.~.~> Stacked capacitor
304  DF  .~.~.~.~> Storage node isolated by dielectric from semiconductor substrate
305  DF  .~.~.~.~> With means to insulate adjacent storage nodes (e.g., channel stops or field oxide)


DEFINITION

Classification: 257/301

Capacitor in trench:

(under subclass 296) Subject matter wherein the capacitor is located in a recess in the semiconductor substrate.