US PATENT SUBCLASS 257 / 305
.~.~.~.~ With means to insulate adjacent storage nodes (e.g., channel stops or field oxide)

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
296  DF  .~.~ Insulated gate capacitor or insulated gate transistor combined with capacitor (e.g., dynamic memory cell) {10}
301  DF  .~.~.~ Capacitor in trench {4}
305.~.~.~.~ With means to insulate adjacent storage nodes (e.g., channel stops or field oxide)

DEFINITION

Classification: 257/305

With means to insulate adjacent storage nodes (e.g., channel stops or field oxide):

(under subclass 301) Subject matter including means for electrically insulating an electrode upon which the charge varies as an indication of the memory state of the device (e.g., a memory cell).

(1) Note. The insulating means may, for example, comprise a channel stop or a field oxide.