US PATENT SUBCLASS 257 / 419
.~.~.~.~ With thinned central active portion of semiconductor surrounded by thick insensitive portion (e.g., diaphragm type strain gauge)


Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use



257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

414  DF  RESPONSIVE TO NON-ELECTRICAL SIGNAL (E.G., CHEMICAL, STRESS, LIGHT, OR MAGNETIC FIELD SENSORS) {4}
415  DF  .~ Physical deformation {3}
417  DF  .~.~ Strain sensors {1}
418  DF  .~.~.~ With means to concentrate stress {1}
419.~.~.~.~ With thinned central active portion of semiconductor surrounded by thick insensitive portion (e.g., diaphragm type strain gauge)


DEFINITION

Classification: 257/419

With thinned central active portion of semiconductor surrounded by thick insensitive portion (e.g. diaphragm type strain gauge):

(under subclass 418) Subject matter wherein the means to concentrate the physically deforming stress is a thinned central active portion of semiconductor surrounded by a thick insensitive portion (e.g., a diaphragm type strain gauge).