US PATENT SUBCLASS 257 / 53
.~.~ Responsive to nonelectrical external signals (e.g., light)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

49  DF  NON-SINGLE CRYSTAL, OR RECRYSTALLIZED, SEMICONDUCTOR MATERIAL FORMS PART OF ACTIVE JUNCTION (INCLUDING FIELD-INDUCED ACTIVE JUNCTION) {9}
52  DF  .~ Amorphous semiconductor material {4}
53.~.~ Responsive to nonelectrical external signals (e.g., light) {3}
54  DF  .~.~.~> With Schottky barrier to amorphous material
55  DF  .~.~.~> Amorphous semiconductor is alloy or contains material to change band gap (e.g., Si Ge , SiN )
56  DF  .~.~.~> With impurity other than hydrogen to passivate dangling bonds (e.g., halide)

DEFINITION

Classification: 257/53

Responsive to nonelectrical external signals (e.g., light):

(under subclass 52) Subject matter wherein the amorphous semiconductor active junction generates an electrical signal when subjected to non-electrical (e.g., optical, thermal, or vibratory) signals.

SEE OR SEARCH CLASS

430, Radiation Imagery Chemistry: Process, Composition or Product,

57.4, for electrophotographic plates containing amorphous silicon.