US PATENT SUBCLASS 257 / 55
.~.~.~ Amorphous semiconductor is alloy or contains material to change band gap (e.g., Si Ge , SiN )

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

49  DF  NON-SINGLE CRYSTAL, OR RECRYSTALLIZED, SEMICONDUCTOR MATERIAL FORMS PART OF ACTIVE JUNCTION (INCLUDING FIELD-INDUCED ACTIVE JUNCTION) {9}
52  DF  .~ Amorphous semiconductor material {4}
53  DF  .~.~ Responsive to nonelectrical external signals (e.g., light) {3}
55.~.~.~ Amorphous semiconductor is alloy or contains material to change band gap (e.g., Si Ge , SiN )

DEFINITION

Classification: 257/55

Amorphous semiconductor is alloy or contains material to change band gap (e.g., SixGe1-x, SiNy):

(under subclass 53) Subject matter wherein the amorphous semiconductor is an alloy or contains material to change the band gap of the amorphous semiconductor material (e.g., SixGe1-x see below, SiNy).

SEE OR SEARCH THIS CLASS, SUBCLASS:

63, for this subject matter except in a device which is not responsive to nonelectrical external signals.