US PATENT SUBCLASS 438 / 147
.~.~ Changing width or direction of channel (e.g., meandering channel, etc.)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
144  DF  .~ Charge transfer device (e.g., CCD, etc.) {4}
147.~.~ Changing width or direction of channel (e.g., meandering channel, etc.)

DEFINITION

Classification: 438/147

Changing width or direction of channel (e.g., meandering channel, etc.):

(under subclass 144) Process for making a charge transfer device structure wherein the active channel region changes

its width or direction throughout all or part of the distance between adjacent storage sites.