US Patent Class 438
SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS-- Main Headings



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Current as of: June, 1999
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CLASS NOTES
1  DF  HAVING BIOMATERIAL COMPONENT OR INTEGRATED WITH LIVING ORGANISM
2  DF  HAVING SUPERCONDUCTIVE COMPONENT
3  DF  HAVING MAGNETIC OR FERROELECTRIC COMPONENT
4  DF  REPAIR OR RESTORATION
5  DF  INCLUDING CONTROL RESPONSIVE TO SENSED CONDITION {3}
14  DF  WITH MEASURING OR TESTING {3}
19  DF  HAVING INTEGRAL POWER SOURCE (E.G., BATTERY, ETC.)
20  DF  ELECTRON EMITTER MANUFACTURE
21  DF  MANUFACTURE OF ELECTRICAL DEVICE CONTROLLED PRINTHEAD
22  DF  MAKING DEVICE OR CIRCUIT EMISSIVE OF NONELECTRICAL SIGNAL {12}
48  DF  MAKING DEVICE OR CIRCUIT RESPONSIVE TO NONELECTRICAL SIGNAL {5}
99  DF  HAVING ORGANIC SEMICONDUCTIVE COMPONENT
100  DF  MAKING POINT CONTACT DEVICE {1}
102  DF  HAVING SELENIUM OR TELLURIUM ELEMENTAL SEMICONDUCTOR COMPONENT {1}
104  DF  HAVING METAL OXIDE OR COPPER SULFIDE COMPOUND SEMICONDUCTOR COMPONENT
105  DF  HAVING DIAMOND SEMICONDUCTOR COMPONENT
106  DF  PACKAGING (E.G., WITH MOUNTING, ENCAPSULATING, ETC.) OR TREATMENT OF PACKAGED SEMICONDUCTOR {10}
128  DF  MAKING DEVICE ARRAY AND SELECTIVELY INTERCONNECTING {4}
133  DF  MAKING REGENERATIVE-TYPE SWITCHING DEVICE (E.G., SCR, IGBT, THYRISTOR, ETC.) {4}
141  DF  MAKING CONDUCTIVITY MODULATION DEVICE (E.G., UNIJUNCTION TRANSISTOR, DOUBLE BASE DIODE, CONDUCTIVITY-MODULATED TRANSISTOR, ETC.)
142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
379  DF  VOLTAGE VARIABLE CAPACITANCE DEVICE MANUFACTURE (E.G., VARACTOR, ETC.)
380  DF  AVALANCHE DIODE MANUFACTURE (E.G., IMPATT, TRAPPAT, ETC.)
381  DF  MAKING PASSIVE DEVICE (E.G., RESISTOR, CAPACITOR, ETC.) {4}
400  DF  FORMATION OF ELECTRICALLY ISOLATED LATERAL SEMICONDUCTIVE STRUCTURE {10}
455  DF  BONDING OF PLURAL SEMICONDUCTOR SUBSTRATES {4}
460  DF  SEMICONDUCTOR SUBSTRATE DICING {5}
466  DF  DIRECT APPLICATION OF ELECTRICAL CURRENT {4}
471  DF  GETTERING OF SUBSTRATE {4}
478  DF  FORMATION OF SEMICONDUCTIVE ACTIVE REGION ON ANY SUBSTRATE (E.G., FLUID GROWTH, DEPOSITION) {9}
510  DF  INTRODUCTION OF CONDUCTIVITY MODIFYING DOPANT INTO SEMICONDUCTIVE MATERIAL {7}
570  DF  FORMING SCHOTTKY JUNCTION (I.E., SEMICONDUCTOR-CONDUCTOR RECTIFYING JUNCTION CONTACT) {4}
584  DF  COATING WITH ELECTRICALLY OR THERMALLY CONDUCTIVE MATERIAL {2}
689  DF  CHEMICAL ETCHING {6}
758  DF  COATING OF SUBSTRATE CONTAINING SEMICONDUCTOR REGION OR OF SEMICONDUCTOR SUBSTRATE {6}
795  DF  RADIATION OR ENERGY TREATMENT MODIFYING PROPERTIES OF SEMICONDUCTOR REGION OF SUBSTRATE (E.G., THERMAL, CORPUSCULAR, ELECTROMAGNETIC, ETC.) {3}
800  DF  MISCELLANEOUS
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CROSS-REFERENCE ART COLLECTIONS
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900  DF  BULK EFFECT DEVICE MAKING
901  DF  CAPACITIVE JUNCTION
902  DF  CAPPING LAYER
903  DF  CATALYST AIDED DEPOSITION
904  DF  CHARGE CARRIER LIFETIME CONTROL
905  DF  CLEANING OF REACTION CHAMBER
906  DF  CLEANING OF WAFER AS INTERIM STEP
907  DF  CONTINUOUS PROCESSING {1}
909  DF  CONTROLLED ATMOSPHERE
910  DF  CONTROLLING CHARGING STATE AT SEMICONDUCTOR-INSULATOR INTERFACE
911  DF  DIFFERENTIAL OXIDATION AND ETCHING
912  DF  DISPLACING PN JUNCTION
913  DF  DIVERSE TREATMENTS PERFORMED IN UNITARY CHAMBER
914  DF  DOPING {11}
926  DF  DUMMY METALLIZATION
927  DF  ELECTROMIGRATION RESISTANT METALLIZATION
928  DF  FRONT AND REAR SURFACE PROCESSING
929  DF  EUTECTIC SEMICONDUCTOR
930  DF  TERNARY OR QUATERNARY SEMICONDUCTOR COMPRISED OF ELEMENTS FROM THREE DIFFERENT GROUPS (E.G., I-III-V, ETC.)
931  DF  SILICON CARBIDE SEMICONDUCTOR
932  DF  BORON NITRIDE SEMICONDUCTOR
933  DF  GERMANIUM OR SILICON OR GE-SI ON III-V
934  DF  SHEET RESISTANCE (I.E., DOPANT PARAMETERS)
935  DF  GAS FLOW CONTROL
936  DF  GRADED ENERGY GAP
937  DF  HILLOCK PREVENTION
938  DF  LATTICE STRAIN CONTROL OR UTILIZATION
939  DF  LANGMUIR-BLODGETT FILM UTILIZATION
940  DF  LASER ABLATIVE MATERIAL REMOVAL
941  DF  LOADING EFFECT MITIGATION
942  DF  MASKING {6}
953  DF  MAKING RADIATION RESISTANT DEVICE
954  DF  MAKING OXIDE-NITRIDE-OXIDE DEVICE
955  DF  MELT-BACK
956  DF  MAKING MULTIPLE WAVELENGTH EMISSIVE DEVICE
957  DF  MAKING METAL-INSULATOR-METAL DEVICE
958  DF  PASSIVATION LAYER
959  DF  MECHANICAL POLISHING OF WAFER
960  DF  POROUS SEMICONDUCTOR
961  DF  ION BEAM SOURCE AND GENERATION
962  DF  QUANTUM DOTS AND LINES
963  DF  REMOVING PROCESS RESIDUES FROM VERTICAL SUBSTRATE SURFACES
964  DF  ROUGHENED SURFACE
965  DF  SHAPED JUNCTION FORMATION
966  DF  SELECTIVE OXIDATION OF ION-AMORPHOUSIZED LAYER
967  DF  SEMICONDUCTOR ON SPECIFIED INSULATOR
968  DF  SEMICONDUCTOR-METAL-SEMICONDUCTOR
969  DF  SIMULTANEOUS FORMATION OF MONOCRYSTALLINE AND POLYCRYSTALLINE REGIONS
970  DF  SPECIFIED ETCH STOP MATERIAL
971  DF  STOICHIOMETRIC CONTROL OF HOST SUBSTRATE COMPOSITION
972  DF  STORED CHARGE ERASURE
973  DF  SUBSTRATE ORIENTATION
974  DF  SUBSTRATE SURFACE PREPARATION
975  DF  SUBSTRATE OR MASK ALIGNING FEATURE
976  DF  TEMPORARY PROTECTIVE LAYER
977  DF  THINNING OR REMOVAL OF SUBSTRATE
978  DF  FORMING TAPERED EDGES ON SUBSTRATE OR ADJACENT LAYERS
979  DF  TUNNEL DIODES
980  DF  UTILIZING PROCESS EQUIVALENTS OR OPTIONS
981  DF  UTILIZING VARYING DIELECTRIC THICKNESS
982  DF  VARYING ORIENTATION OF DEVICES IN ARRAY
983  DF  ZENER DIODES {1}
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FOREIGN ART COLLECTIONS
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FOR 135  DF  MAKING DEVICE HAVING ORGANIC SEMICONDUCTOR COMPONENT (437/1)
FOR 136  DF  MAKING DEVICE RESPONSIVE TO RADIATION (437/2) {3}
FOR 140  DF  MAKING THYRISTOR, E.G., DIAC, TRIAC, ETC. (437/6)
FOR 141  DF  INCLUDING CONTROL RESPONSIVE TO SENSED CONDITION (437/7)
FOR 142  DF  INCLUDING TESTING OR MEASURING (437/8)
FOR 143  DF  INCLUDING APPLICATION OF VIBRATORY FORCE (437/9)
FOR 144  DF  INCLUDING GETTERING (437/10) {3}
FOR 148  DF  THERMOMIGRATION (437/14)
FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 330  DF  DIRECTLY APPLYING ELECTRICAL CURRENT (437/170) {2}
FOR 333  DF  APPLYING CORPUSCULAR OR ELECTROMAGNETIC ENERGY (437/173) {1}
FOR 335  DF  FORMING SCHOTTKY CONTACT (437/175) {3}
FOR 340  DF  MAKING OR ATTACHING ELECTRODE ON OR TO SEMICONDUCTOR, OR SECURING COMPLETED SEMICONDUCTOR TO MOUNTING OR HOUSING (437/180) {13}
FOR 385  DF  INCLUDING COATING OR MATERIAL REMOVAL, E.G., ETCHING, GRINDING, ETC. (437/ 225) {9}
FOR 407  DF  TEMPERATURE TREATMENT MODIFYING PROPERTIES OF SEMICONDUCTOR, E.G., ANNEALING, SINTERING, ETC. (437/247) {1}
FOR 409  DF  INCLUDING SHAPING (437/249)
FOR 410  DF  MISCELLANEOUS (437/250)
FOR 411  DF  UTILIZING PROCESS EQUIVALENTS OR OPTIONS (437/900)
FOR 412  DF  MAKING PRESSURE SENSITIVE DEVICE (437/901)
FOR 413  DF  MAKING DEVICE HAVING HEAT SINK (437/902)
FOR 414  DF  MAKING THERMOPILE (437/903)
FOR 415  DF  MAKING DIODE (437/904) {1}
FOR 418  DF  LASER PROCESSING OF FIELD EFFECT TRANSISTOR (FET) (437/907)
FOR 419  DF  LASER PROCESSING OF TRANSISTOR (437/908)
FOR 420  DF  MAKING TRANSISTOR ONLY (437/909)
FOR 421  DF  MAKING JOSEPHSON JUNCTION DEVICE (437/910)
FOR 422  DF  MAKING JUNCTION-FIELD EFFECT TRANSISTOR (J-FET) OR STATIC INDUCTION THYRSISTOR (SIT) DEVICE (437/911)
FOR 423  DF  MAKING METAL SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MESFET) DEVICE ONLY (437/912)
FOR 424  DF  MAKING METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MOSFET) DEVICE (437/913)
FOR 425  DF  MAKING NON-EPITAXIAL DEVICE (437/914)
FOR 426  DF  MAKING VERTICALLY STACKED DEVICES (3-DIMENSIONAL STRUCTURE) (437/915)
FOR 427  DF  MAKING PHOTOCATHODE OR VIDICON (437/916)
FOR 428  DF  MAKING LATERAL TRANSISTOR (437/917)
FOR 429  DF  MAKING RESISTOR (437/918)
FOR 430  DF  MAKING CAPACITOR (437/919)
FOR 431  DF  MAKING SILICON-OXIDE-NITRIDE-OXIDE ON SILICON (SONOS) DEVICE (437/920)
FOR 432  DF  MAKING STRAIN GAGE (437/921)
FOR 433  DF  MAKING FUSE OR FUSABLE DEVICE (437/922)
FOR 434  DF  WITH REPAIR OR RECOVERY OF DEVICE (437/923)
FOR 435  DF  HAVING SUBSTRATE OR MASK ALIGNING FEATURE (437/924)
FOR 436  DF  SUBSTRATE SUPPORT OR CAPSULE CONSTRUCTION (437/925)
FOR 437  DF  CONTINUOUS PROCESSING (437/926)
FOR 438  DF  FORMING HOLLOW BODIES AND ENCLOSED CAVITIES (437/927)
FOR 439  DF  ENERGY BEAM TREATING RADIATION RESIST ON SEMICONDUCTOR (437/928)
FOR 440  DF  RADIATION ENHANCED DIFFUSION (R.E.D.) (437/929)
FOR 441  DF  ION BEAM SOURCE AND GENERATION (437/930)
FOR 442  DF  IMPLANTATION THROUGH MASK (437/931)
FOR 443  DF  RECOIL IMPLANTATION (437/932)
FOR 444  DF  DUAL SPECIES IMPLANTATION OF SEMICONDUCTOR (437/933)
FOR 445  DF  DOPANT ACTIVATION PROCESS (437/934)
FOR 446  DF  BEAM WRITING OF PATTERNS (437/935)
FOR 447  DF  BEAM PROCESSING OF COMPOUND SEMICONDUCTOR DEVICE (437/936)
FOR 448  DF  HYDROGEN PLASMA TREATMENT OF SEMICONDUCTOR DEVICE (437/937)
FOR 449  DF  MAKING RADIATION RESISTANT DEVICE (437/938)
FOR 450  DF  DEFECT CONTROL OF SEMICONDUCTOR WAFER (PRETREATMENT) (437/939)
FOR 451  DF  SELECTIVE OXIDATION OF ION AMORPHOUSIZED LAYERS (437/940)
FOR 452  DF  CONTROLLING CHARGING STATE AT SEMICONDUCTOR-INSULATOR INTERFACE (437/941)
FOR 453  DF  INCOHERENT LIGHT PROCESSING (437/942)
FOR 454  DF  THERMALLY ASSISTED BEAM PROCESSING (437/943)
FOR 455  DF  UTILIZING LIFT OFF (437/944)
FOR 456  DF  STOICHIOMETRIC CONTROL OF HOST SUBSTRATE COMPOSITION (437/945)
FOR 457  DF  SUBSTRATE SURFACE PREPARATION (437/946)
FOR 458  DF  FORMING TAPERED EDGES ON SUBSTRATE OR ADJACENT LAYERS (437/947)
FOR 459  DF  MOVABLE MASK (437/948)
FOR 460  DF  CONTROLLED ATMOSPHERE (437/949)
FOR 461  DF  SHALLOW DIFFUSION (437/950)
FOR 462  DF  AMPHOTERIC DOPING (437/951)
FOR 463  DF  CONTROLLING DIFFUSION PROFILE BY OXIDATION (437/952)
FOR 464  DF  DIFFUSION OF OVERLAPPING REGIONS (COMPENSATION) (437/953)
FOR 465  DF  VERTICAL DIFFUSION THROUGH A LAYER (437/954)
FOR 466  DF  NONSELECTIVE DIFFUSION (437/955)
FOR 467  DF  DISPLACING P-N JUNCTION (437/956)
FOR 468  DF  ELECTROMIGRATION (437/957)
FOR 469  DF  SHAPED JUNCTION FORMATION (437/958)
FOR 470  DF  USING NONSTANDARD DOPANT (437/959)
FOR 471  DF  WASHED EMITTER PROCESS (437/960)
FOR 472  DF  EMITTER DIP PREVENTION (OR UTILIZATION) (437/961)
FOR 473  DF  UTILIZING SPECIAL MASKS (CARBON, ETC.) (437/962)
FOR 474  DF  LOCALIZED HEATING CONTROL DURING FLUID GROWTH (437/963)
FOR 475  DF  FLUID GROWTH INVOLVING VAPOR-LIQUID-SOLID STAGES (437/964)
FOR 476  DF  FLUID GROWTH OF COMPOUNDS COMPOSED OF GROUPS II, IV, OR VI ELEMENTS (437/965)
FOR 477  DF  FORMING THIN SHEETS (437/966)
FOR 478  DF  PRODUCING POLYCRYSTALLINE SEMICONDUCTOR MATERIAL (437/967)
FOR 479  DF  SELECTIVE OXIDATION OF POLYCRYSTALLINE LAYER (437/968)
FOR 480  DF  FORMING GRADED ENERGY GAP LAYERS (437/969)
FOR 481  DF  DIFFERENTIAL CRYSTAL GROWTH (437/970)
FOR 482  DF  FLUID GROWTH DOPING CONTROL (437/971)
FOR 483  DF  UTILIZING MELT-BACK (437/972)
FOR 484  DF  SOLID PHASE EPITAXIAL GROWTH (437/973)
FOR 485  DF  THINNING OR REMOVAL OF SUBSTRATE (437/974)
FOR 486  DF  DIFFUSION ALONG GRAIN BOUNDARIES (437/975)
FOR 487  DF  CONTROLLING LATTICE STRAIN (437/976)
FOR 488  DF  UTILIZING ROUGHENED SURFACE (437/977)
FOR 489  DF  UTILIZING MULTIPLE DIELECTRIC LAYERS (437/978)
FOR 490  DF  UTILIZING THICK-THIN OXIDE FORMATION (437/979)
FOR 491  DF  FORMING POLYCRYSTALLINE SEMICONDUCTOR PASSIVATION (437/980)
FOR 492  DF  PRODUCING TAPERED ETCHING (437/981)
FOR 493  DF  REFLOW OF INSULATOR (437/982)
FOR 494  DF  OXIDATION OF GATE OR GATE CONTACT LAYER (437/983)
FOR 495  DF  SELF-ALIGNING FEATURE (437/984)
FOR 496  DF  DIFFERENTIAL OXIDATION AND ETCHING (437/985)
FOR 497  DF  DIFFUSING LATERALLY AND ETCHING (437/986)
FOR 498  DF  DIFFUSING DOPANTS IN COMPOUND SEMICONDUCTOR (437/987)