US PATENT SUBCLASS 438 / 510
INTRODUCTION OF CONDUCTIVITY MODIFYING DOPANT INTO SEMICONDUCTIVE MATERIAL

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

510INTRODUCTION OF CONDUCTIVITY MODIFYING DOPANT INTO SEMICONDUCTIVE MATERIAL {7}
511  DF  .~> Ordering or disordering
512  DF  .~> Involving nuclear transmutation doping
513  DF  .~> Plasma (e.g., glow discharge, etc.)
514  DF  .~> Ion implantation of dopant into semiconductor region {12}
535  DF  .~> By application of corpuscular or electromagnetic radiation (e.g., electron, laser, etc.) {1}
537  DF  .~> Fusing dopant with substrate (i.e., alloy junction) {3}
542  DF  .~> Diffusing a dopant {15}

DEFINITION

Classification: 438/510

INTRODUCTION OF CONDUCTIVITY MODIFYING DOPANT INTO SEMICONDUCTIVE MATERIAL:

(under the class definition) Process involving the incorporation within a semiconductive substrate of material referred to as dopants or dopant modifiers or impurity functioning to alter the electrical characteristics of semiconductive regions thereof.

SEE OR SEARCH THIS CLASS, SUBCLASS:

301, for a process of making an insulated gate field effect transistor having a step for the self-aligned doping of source or drain regions.

414, for the formation of laterally spaced isolation regions within a semiconductive substrate by the use of differently doped semiconductive regions.

471, for incorporation within a semiconductive substrate of sites (e.g., precipitates, strained layers, etc.) functioning as gettering sites.

658, for processes of incorporating an alloying constituent into a conductive layer deposited upon a semiconductive substrate.

783, for processes of incorporating an additional constituent into a insulative region deposited upon a semiconductive substrate. SEE OR SEARCH CLASS

250, Radiant Energy,

492.1+, for generic irradiation of a semiconductor substrate, per se, wherein no doping of the semiconductor substrate occurs.