US PATENT SUBCLASS 438 / 513-- .~ Plasma (e.g., glow discharge, etc.)

US PATENT SUBCLASS 438 / 513
.~ Plasma (e.g., glow discharge, etc.)

Current as of: June, 1999
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438 /	HD	SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

510	DF	INTRODUCTION OF CONDUCTIVITY MODIFYING DOPANT INTO SEMICONDUCTIVE MATERIAL {7}
513		.~ Plasma (e.g., glow discharge, etc.)

DEFINITION

Classification: 438/513

Plasma (e.g., glow discharge, etc.):

(under subclass 510) Process involving the use of a gaseous vapor of ions in equilibrium or a vapor of ions in vacuum in nonequilibrium state (i.e., a "cold plasma") to introduce a dopant into the semiconductive material.

SEE OR SEARCH THIS CLASS, SUBCLASS:

485, for a process of utilizing a plasma or glow discharge during the deposition of an amorphous semiconductive layer upon a substrate wherein the proximate function of the amorphous semiconductor material is as an active semiconductor region.

SEE OR SEARCH CLASS

204, Chemistry: Electrical and Wave Energy, especially

192.12, for glow discharge sputter deposition (e.g., cathode sputtering).