US PATENT SUBCLASS 438 / FOR 431
MAKING SILICON-OXIDE-NITRIDE-OXIDE ON SILICON (SONOS) DEVICE (437/920)
Current as of:
June, 1999
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438 /
HD
SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS
FOR 431
MAKING SILICON-OXIDE-NITRIDE-OXIDE ON SILICON (SONOS) DEVICE (437/920)
DEFINITION
Classification: 438/FOR.431
MAKING SILICON-OXIDE-NITRIDE-OXIDE OR SILICON (SONOS)
DEVICE:
Foreign art collection involving the construction of a layered gate dielectric of oxide-nitride on a silicon substrate and with silicon as the gate material.
