US PATENT SUBCLASS 438 / 185
.~.~.~.~.~ Multiple doping steps

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
167  DF  .~ Having Schottky gate (e.g., MESFET, HEMT, etc.) {13}
180  DF  .~.~ Self-aligned {1}
181  DF  .~.~.~ Doping of semiconductive region {3}
184  DF  .~.~.~.~ Utilizing gate sidewall structure {1}
185.~.~.~.~.~ Multiple doping steps

DEFINITION

Classification: 438/185

Multiple doping steps:

(under subclass 184) Process including plural steps of doping the semiconductive regions of the substrate.