US PATENT SUBCLASS 438 / 259
.~.~.~ Including forming gate electrode in trench or recess in substrate

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
257  DF  .~.~ Having additional gate electrode surrounded by dielectric (i.e., floating gate) {8}
259.~.~.~ Including forming gate electrode in trench or recess in substrate

DEFINITION

Classification: 438/259

Including forming gate electrode in trench or recess in substrate:

(under subclass 257) Process for making a floating gate type insulated gate field effect transistor including forming a gate electrode in a groove located in the semiconductor substrate.