US PATENT SUBCLASS 438 / 277
.~.~.~.~ Including forming overlapping gate electrodes

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
275  DF  .~.~ Making plural insulated gate field effect transistors of differing electrical characteristics {1}
276  DF  .~.~.~ Introducing a dopant into the channel region of selected transistors {2}
277.~.~.~.~ Including forming overlapping gate electrodes

DEFINITION

Classification: 438/277

Including forming overlapping gate electrodes:

(under subclass 276) Process for making plural insulated gate field effect transistors of differing electrical characteristics including a step of forming overlapping gate electrodes.