US PATENT SUBCLASS 438 / 297
.~.~.~ Recessed oxide formed by localized oxidation (i.e., LOCOS)

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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
294  DF  .~.~ Including isolation structure {3}
297.~.~.~ Recessed oxide formed by localized oxidation (i.e., LOCOS) {1}
298  DF  .~.~.~.~> Doping region beneath recessed oxide (e.g., to form chanstop, etc.)

DEFINITION

Classification: 438/297

Recessed oxide formed by localized oxidation (i.e., LOCOS):

(under subclass 294) Process for making an insulated gate field effect transistor including the step of oxidizing a selected region of a semiconductive substrate to form an embedded oxide (e.g., field oxide) therein which forms the periphery of a semiconductive region utilized for the formation of the field effect transistor.