US PATENT SUBCLASS 438 / 313
.~.~ Complementary bipolar transistors

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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
312  DF  .~ Having heterojunction {7}
313.~.~ Complementary bipolar transistors

DEFINITION

Classification: 438/313

Complementary bipolar transistors:

(under subclass 312) Process for making a structure which comprises plural bipolar transistors wherein the emitter and collector regions of a first bipolar transistor are of opposite conductivity type to the emitter and collector regions of a second bipolar transistor.(i.e., both pnp and npn bipolar transistor structures), at least one of which possesses a heterojunction.