US PATENT SUBCLASS 438 / 317
.~.~ Wide bandgap emitter


Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
312  DF  .~ Having heterojunction {7}
317.~.~ Wide bandgap emitter


DEFINITION

Classification: 438/317

Wide bandgap emitter:

(under subclass 312) Process for making a heterojunction bipolar transistor with an active region which involves a

charge carrier emitter region made of a semiconductor material having an energy gap between its conduction and valence band which is greater than the energy gap of the dissimilar semiconductor material of the base region.

SEE OR SEARCH CLASS

257, Active Solid-State Devices (e.g., Transistors, Solid-State Diodes),

198, for a wide band-gap emitter heterojunction bipolar transistor structure.