US PATENT SUBCLASS 438 / 318
.~.~ Including isolation structure

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
312  DF  .~ Having heterojunction {7}
318.~.~ Including isolation structure {1}
319  DF  .~.~.~> Air isolation (e.g., mesa, etc.)

DEFINITION

Classification: 438/318

Including isolation structure:

(under subclass 312) Process for making a heterojunction bipolar transistor which has structure so as to at least partially electrically isolate the device from laterally adjacent semiconductor regions.

SEE OR SEARCH THIS CLASS, SUBCLASS:

353, for an electrical isolation process in a nonheterojunction bipolar device.